BFR280 Datasheet, PDF (7/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)

BFR280
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
18
dB IC=3mA
0.9GHz
16
15
14
0.9GHz
13
12
1.8GHz
11
10
9
1.8GHz
8
7
6
0
2
4
6
8
V
12
V_CE
Power Gain G_ma, G_ms = f(f)
Intermodulation Intercept Point IP₃=f(I_C)

(3rd order, Output, Z_S=Z_L=50 )
V_CE = Parameter, f = 900MHz
20
8V
dBm
5V
3V
12
2V
8
1V
4
0
-4
-8
-12
0
2
4
6
Power Gain |S₂₁|²= f(f)
8 mA 11
I_C
V_CE = Parameter
28
dB I_C=3mA
24
22
20
18
16
14
12
10
10V
8
1V
6
0.7V
4
0 0.5 1 1.5 2 2.5 GHz 3.5
f
V_CE = Parameter
20
dB ^IC=3mA
16
14
12
10
8
6
10V
4
1V
0.7V
2
0 0.5 1 1.5 2 2.5 GHz 3.5
f
7
Jun-27-2001