BFR280 Datasheet, PDF (3/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)

BFR280
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
AC characteristics (verified by random sampling)
Transition frequency
I_C = 6 mA, V_CE = 5 V, f = 500 MHz
Collector-base capacitance
V_CB = 5 V, f = 1 MHz
Collector-emitter capacitance
V_CE = 5 V, f = 1 MHz
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
Noise figure
f_T
5
7.5
- GHz
C_cb
- 0.27 0.45 pF
C_ce
- 0.18 -
C_eb
- 0.22 -
F
dB
I_C = 1.5 mA, V_CE = 5 V, Z_S = Z_Sopt ,
f = 900 MHz
-
1.5
-
f = 1.8 GHz
-
2
-
Power gain, maximum stable ¹⁾
G_ms
I_C = 3 mA, V_CE = 5 V, Z_S = Z_Sopt, Z_L = Z_Lopt ,
f = 900 MHz
-
17
-
f = 1.8 GHz
- 11.5 -
Transducer gain
I_C = 3 mA, V_CE = 5 V, Z_S = Z_L = 50 ,
f = 900 MHz
|S_21e|²
-
13
-
f = 1.8 GHz
-
8
-
1_{Gms = |S21 / S12|}
3
Jun-27-2001