BFR280 Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)

BFR280
Collector-base capacitance C_cb = f (V_CB)
f = 1MHz
0.4
pF
0.3
0.25
0.2
0.15
0.1
0.05
0
0
2
4
6
8 V 11
V_CB
Transition frequency f_T = f (I_C)
V_CE = Parameter
9.5
GHz
8
7
6
5
10V
8V
5V
3V
2V
4
1V
3
0.7V
2
1
0
0
2
4
6
8 mA 11
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
20
dB
10V
3V
16
3V
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
13
dB
10V
5V
11
3V
2V
10
14
2V
12
0.7V
10
8
0
2
4
6
8 mA 11
I_C
9
8
1V
7
6
0.7V
5
0
2
4
6
8 mA 11
I_C
6
Jun-27-2001