BFR182 Datasheet, PDF (7/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

BFR182
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
20
I_C=10mA
dB
0.9GHz
16
0.9GHz
14
12
1.8GHz
10
1.8GHz
8
Intermodulation Intercept Point IP₃=f(I_C)

(3rd order, Output, Z_S=Z_L=50 )
V_CE = Parameter, f = 900MHz
30
8V
dBm
5V
3V
20
2V
15
1V
10
5
6
0
2
4
6
8
Power Gain G_ma, G_ms = f(f)
V
12
V_CE
0
0
5
10
15
Power Gain |S₂₁|²= f(f)
V
25
I_C
V_CE = Parameter
32
dB IC=10mA
28
26
24
22
20
18
16
14
12
10
8
10V
1V
6
0.7V
4
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
V_CE = Parameter
28
dB ^IC^=10mA
24
22
20
18
16
14
12
10
8
6
10V
4
1V
2
0.7V
0
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
7
Aug-09-2001