BFR182 Datasheet, PDF (1/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

NPN Silicon RF Transistor

For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA

f_T = 8 GHz
F = 1.2 dB at 900 MHz
BFR182
3
2
1 _VPS05161
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFR182
Marking
RGs
Pin Configuration
1=B
2=E
3=C
Package
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T_S
93 °C ¹⁾
Junction temperature
Ambient temperature
Storage temperature
Symbol
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
Value
Unit
12
V
20
20
2
35
mA
4
250
mW
150
°C
-65 ... 150
-65 ... 150
Thermal Resistance
Junction - soldering point²⁾
R_thJS

230
K/W
1_{TS is measured on the collector lead at the soldering point to the pcb}
2For _{calculation of RthJA please refer to Application Note Thermal Resistance}
1
Aug-09-2001