BFR182 Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

BFR182
Collector-base capacitance C_cb = f (V_CB)
f = 1MHz
1.0
pF
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
4
8
12
16 V 22
V_CB
Transition frequency f_T = f (I_C)
V_CE = Parameter
10
GHz
8
7
6
5
4
3
2
1
0
0
5
10
10V
8V
5V
3V
2V
1V
0.7V
15
mA
25
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
20
dB
16
14
12
10
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
12
10V
3V
dB
2V
10V
3V
2V
8
6
1V
4
0.7V
1V
0.7V
8
0
5
10
15
mA
25
I_C
2
0
4
8
12 16 20 mA 26
I_C
6
Aug-09-2001