BFR181T Datasheet, PDF (7/7 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

BFR181T
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
22
I_C=5mA
dB
0.9GHz
18
16
0.9GHz
14
1.8GHz
12
1.8GHz
10
8
60
3
6
V
12
V_CE
Power Gain G_ma, G_ms = f(f)
Intermodulation Intercept Point IP₃=f(I_C)

(3rd order, Output, Z_S=Z_L=50 )
V_CE = Parameter, f = 900MHz
22
8V
dBm
5V
3V
14
2V
10
1V
6
2
-20
5
10
Power Gain |S₂₁|²= f(f)
mA
20
I_C
V_CE = Parameter
45
I_C=5mA
dB
35
30
25
20
15
10
10V
5V
1V
5
00
1
2
3
4
5 ^GHz 7
f
V_CE = Parameter
25
I_C=5mA
dBm
15
10
5
10V
5V
0
1V
-50
1
2
3
4
5 ^GHz 7
f
7
Aug-09-2001