BFR181T Datasheet, PDF (3/7 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

BFR181T
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
AC characteristics (verified by random sampling)
Transition frequency
I_C = 10 mA, V_CE = 8 V, f = 500 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
Collector-emitter capacitance
V_CE = 10 V, f = 1 MHz
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
Noise figure
I_C = 2 mA, V_CE = 8 V, Z_S = Z_Sopt ,
f = 900 MHz
f = 1.8 GHz
f_T
6
8
- GHz
C_cb
- 0.26 0.4 pF
C_ce
- 0.17 -
C_eb
-
0.3
-
F
dB
- 1.45 -
-
1.8
-
Power gain, maximum stable ¹⁾
G_ms
I_C = 5 mA, V_CE = 8 V, Z_S = Z_Sopt, Z_L = Z_Lopt ,
f = 900 MHz
- 19.5 -
Power gain, maximum available ²⁾
I_C = 5 mA, V_CE = 8 V, Z_S = Z_Sopt, Z_L = Z_Lopt ,
f = 1.8 GHz
Transducer gain

I_C = 5 mA, V_CE = 8 V, Z_S = Z_L = 50 ,
f = 900 MHz
f = 1.8 GHz
G_ma
|S_21e|²
- 13.5 -
- 15.5 -
- _10.5 -
1_{Gms = |S21 / S12|}
2_{Gma = |S21 / S12| (k-(k}2_-1)1/2₎
3
Aug-09-2001