BFR181T Datasheet, PDF (6/7 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

BFR181T
Collector-base capacitance C_cb = f (V_CB)
f = 1MHz
0.4
pF
0.3
0.25
0.2
0.15
0.1
0.05
00
5
10
15
V
25
V_CB
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
22
10V
dB
5V
3V
16
2V
Transition frequency f_T = f (I_C)
V_CE = Parameter
9
GHz
7
6
5
4
3
2
1
00
5
10V
8V
5V
3V
2V
1V
0.7V
10
mA
20
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
15
10V
5V
dB
3V
2V
9
13
1V
10
0.7V
70
4
8
12
mA
20
I_C
6
1V
3
0.7
00
4
8
12
mA
20
I_C
6
Aug-09-2001