BFP780_15 Datasheet, PDF (7/28 Pages) Infineon Technologies AG – 200 mW High Gain RF Driver Amplifier

BFP780
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Product Brief
Product Brief
The BFP780 is a single stage 200 mW high gain driver amplifier. The device is not internally matched and hence
provides flexibility to be used for any application where high linearity is key. There are several application notes
available, most of them for LTE frequencies. The device is based on Infineon's reliable and cost effective NPN
silicon germanium technology running in very high volume. The technology comprises low ohmic substrate
contacts so that emitter bond wires can be omitted. Thereby the emitter inductance is minimized and the power
gain optimized.
The data sheet describes the device mainly at 90 mA collector current IC, operated in Class A mode. Under these
conditions the BFP780 provides 200 mW RF power and highest linearity. If energy efficiency is in the focus it is
recommended to operate the device in class AB mode. That means to adjust a quiescent current Icq lower than
90 mA and use the self biasing effect to get high linearity and efficiency when the input RF power is high. Please
refer to figure 7-18, where as an example an Icq of 70 mA is adjusted.
For the BFP780 a large signal compact model in SGP format is available. Further information please find in
chapter 8.
The BFP780 is very rugged. The special design of the emitter-base diode makes the input robust and yields a high
maximum RF input power. The maximum RF input power is 20 dBm (matched condition). The collector design
allows safe operation with a single 5 V supply.
The chip is housed in a halogen free industry standard package SOT343. The high thermal conductivity of the
silicon substrate and the low thermal resistance of the package add up to a thermal resistance of only 95 K/W,
what leads to moderate junction temperatures even at high dissipated DC power values. Recommended operating
conditions can be found in chapter 4. The proper die attach with good thermal contact is tested 100%, so that there
is a minimum variation of thermal properties. The devices are 100% DC and RF tested
Data Sheet
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Revision 3.0, 2015-07-08