BFP780_15 Datasheet, PDF (13/28 Pages) Infineon Technologies AG – 200 mW High Gain RF Driver Amplifier

BFP780
Electrical Performance in Test Fixture
7
Electrical Performance in Test Fixture
7.1
DC Parameter Table
Table 7-1 DC Characteristics at T_A = 25 °C
Parameter
Symbol
Values
Unit Note / Test Condition
Min. Typ. Max.
Collector emitter breakdown voltage
Collector emitter leakage current
V_(BR)CEO 6.1
I_CES
–
6.6 –
1¹⁾
40
0.1 3
V
I_C = 1 mA, open base
nA
V_CE = 8 V, V_BE = 0
µA V_CE = 18 V, V_BE = 0
E-B short circuited
Collector base leakage current
I_CBO
–
1¹⁾
40
nA V_CB = 8 V, I_E = 0
Open emitter
Emitter base leakage current
I_EBO
–
–
10
µA V_EB = 0.5 V, I_C = 0
Open collector
DC current gain
h_FE
85
160 230
V_CE = 5 V, I_C = 90 mA
Pulse measured²⁾
1) Accuracy of typcial value limited by the cycle time of the 100% test.
2) Test duration 14 ms, duty cycle 46%. Regard that the current gain h_FE depends on the junction temperature T_J and T_J
amongst others from the thermal resistance R_THSA of the pcb, see notes on Table 4-1. Hence the h_FE specified in this data
sheet must not be the same as in the application. It is recommended to apply circuit design techniques to make the collector
current I_C independent on the h_FE production variation and temperature effects.
Data Sheet
13
Revision 3.0, 2015-07-08