1EDI05I12AH Datasheet, PDF (7/17 Pages) Infineon Technologies AG – Single channel IGBT gate driver IC in wide body package

EiceDRIVER^™ 1EDI Compact
Single channel IGBT gate driver IC in wide body package
Functional Description
3.3
Protection Features
3.3.1
Undervoltage Lockout (UVLO)
IN+
VCC1
VUVLOH2
VUVLOL2
VCC2
VUVLOH1
VUVLOL1
Figure 5
OUT
UVLO Behavior
To ensure correct switching of IGBTs the device is equipped with an undervoltage lockout for input and output
independently. Operation starts only after both VCC levels have increased beyond the respective V_UVLOH levels.
If the power supply voltage V_VCC1 of the input chip drops below V_UVLOL1 a turn-off signal is sent to the output
chip before power-down. The IGBT is switched off and the signals at IN+ and IN- are ignored until V_VCC1 reaches
the power-up voltage V_UVLOH1 again.
If the power supply voltage V_VCC2 of the output chip goes down below V_UVLOL2 the IGBT is switched off and
signals from the input chip are ignored until V_VCC2 reaches the power-up voltage V_UVLOH2 again.
Note:
V_VCC2 is always referred to GND2 and does not differentiate between unipolar or bipolar supply.
3.3.2
Active Shut-Down
The active shut-down feature ensures a safe IGBT off-state in case the output chip is not connected to the
power supply or an undervoltage lockout is in effect. The IGBT gate is clamped at OUT- to GND2.
3.3.3
Short Circuit Clamping
During short circuit the IGBT’s gate voltage tends to rise because of the feedback via the Miller capacitance. An
additional protection circuit connected to OUT+ limits this voltage to a value slightly higher than the supply
voltage. A maximum current of 500 mA may be fed back to the supply through this path for 10 μs. If higher
currents are expected or tighter clamping is desired external Schottky diodes may be added.
3.4
Non-Inverting and Inverting Inputs
IN+
IN-
Figure 6
OUT
Typical Switching Behavior
Datasheet
7
Rev. 2.0
2016-07-05