1EDI05I12AH Datasheet, PDF (10/17 Pages) Infineon Technologies AG – Single channel IGBT gate driver IC in wide body package

EiceDRIVER^™ 1EDI Compact
Single channel IGBT gate driver IC in wide body package
Electrical Parameters
4.2
Operating Parameters
Note:
Within the operating range the IC operates as described in the functional description. Unless
otherwise noted all parameters refer to GND1.
Table 3 Operating Parameters
Parameter
Power supply output side
Power supply input side
Logic input voltages (IN+,IN-)
Switching frequency
Ambient temperature
Thermal coefficient, junction-top
Common mode transient immunity (CMTI)
Symbol
V_VCC2
V_VCC1
V_LogicIN
f_sw
T_A
Ψ_th,jt
|dV_ISO/dt|
Min.
13
3.1
-0.3
–
-40
–
–
Values
Max.
35
17
17
1.0
125
4.8
100
Unit Note /
Test Condition
V
V
V
MHz
°C
K/W
kV/μs
5)
–
–
6)7)
–
7) _{at TA = 85°C}
7) _{at 1000 V}
4.3
Electrical Characteristics
Note:
The electrical characteristics include the spread of values in supply voltages, load and junction
temperatures given below. Typical values represent the median values at T_A = 25°C. Unless otherwise
noted all voltages are given with respect to their respective GND (GND1 for pins 1 to 3, GND2 for pins 6
to 8).
4.3.1
Voltage Supply
Table 4 Voltage Supply
Parameter
Symbol
UVLO threshold input chip
V_UVLOH1
V_UVLOL1
UVLO hysteresis input chip
(V_UVLOH1 - V_UVLOL1)
V_HYS1
UVLO threshold output chip (IGBT V_UVLOH2
supply)
V_UVLOL2
Min.
–
2.55
0.09
–
10.5
Values
Typ.
2.85
2.75
0.1
Max.
3.1
–
–
12.0
12.7
11.1
–
Unit Note or Test
Condition
V
–
V
–
V
–
V
8)
V
8)
5 _{With respect to GND2.}
6 _{do not exceed max. power dissipation}
7 _{Parameter is not subject to production test - verified by design/characterization}
8 _{With respect to GND2.}
Datasheet
10
Rev. 2.0
2016-07-05