SPP04N80C3_08 Datasheet, PDF (6/10 Pages) Infineon Technologies AG – CoolMOSTM Power Transistor Features New revolutionary high voltage technology

9 Typ. gate charge
V _GS=f(Q _gate); I _D=4 A pulsed
parameter: V _DD
10
8
160 V
640 V
6
SPP04N80C3
10 Forward characteristics of reverse diode
I _F=f(V _SD); t _p=10 µs
parameter: T _j
10²
150°C (98%)
25 °C
10¹
25°C (98°C)
150 °C
4
10⁰
2
0
10^-1
0
4
8
12
16
20
24
0
0.5
1
1.5
2
Q _gate [nC]
V _SD [V]
11 Avalanche energy
E _AS=f(T _j); I _D=0.8 A; V _DD=50 V
12 Drain-source breakdown voltage
V _BR(DSS)=f(T _j); I _D=0.25 mA
180
960
150
920
880
120
840
90
800
60
760
30
720
0
25
50
75
100
125
150
T _j [°C]
680
-60 -20 20
60 100 140 180
T _j [°C]
Rev. 2.9
page 6
2008-10-15