SPP04N80C3_08 Datasheet, PDF (5/10 Pages) Infineon Technologies AG – CoolMOSTM Power Transistor Features New revolutionary high voltage technology

5 Typ. output characteristics
I _D=f(V _DS); T _j=150 °C; t _p=10 µs
parameter: V _GS
6
20 V
10 V
6V
5
5.5 V
4
3
5V
2
4.5 V
1
SPP04N80C3
6 Typ. drain-source on-state resistance
R _DS(on)=f(I _D); T _j=150 °C
parameter: V _GS
5.4
5
4.6
4.2
3.8
3.4
4.5 V _{5 V}
4V
3
5.5 V
6V
10 V
20 V
0
2.6
0
5
10
15
20
25
0
2
4
6
8
V _DS [V]
I _D [A]
7 Drain-source on-state resistance
R _DS(on)=f(T _j); I _D=2.5 A; V _GS=10 V
3.6
8 Typ. transfer characteristics
I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max; t _p=10 µs
parameter: T _j
15
3.2
25 °C
2.8
2.4
10
2
1.6
typ
98 %
1.2
5
150 °C
0.8
0.4
0
-60 -20 20
60 100 140 180
T _j [°C]
0
0
2
4
6
8
10
V _GS [V]
Rev. 2.9
page 5
2008-10-15