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SPP04N80C3_08 Datasheet, PDF (4/10 Pages) Infineon Technologies AG – CoolMOSTM Power Transistor Features New revolutionary high voltage technology
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1 Power dissipation
P tot=f(T C)
70
60
50
40
30
2 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
102
limited by on-state
resistance
101
100
SPP04N80C3
1 µs
10 µs
100 µs
1 ms
10 ms
20
DC
10-1
10
0
0
25
50
75 100 125 150
T C [°C]
10-2
1
10
100
V DS [V]
1000
3 Max. transient thermal impedance
ZthJC=f(tP)
parameter: D=t p/T
101
4 Typ. output characteristics
I D=f(V DS); T j=25 °C; t p=10 µs
parameter: V GS
15
20 V
12
100
0.5
0.2
0.1
0.05
10-1
0.02
0.01
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
t p [s]
10 V
9
6V
6
5.5 V
3
5V
4.5 V
0
0
5
10
15
20
25
V DS [V]
Rev. 2.9
page 4
2008-10-15
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