SMBT2222A Datasheet, PDF (6/6 Pages) Infineon Technologies AG – NPN Silicon Switching Transistor

SMBT2222A/ MMBT2222A
Saturation voltage I_C = f (V_BEsat, V_CEsat)
h_FE = 10
10 ^{3 SMBT 2222/A}
mA
Ι_C
10 ²
V_CE
5
EHP00742
V_BE
10 ¹
5
10 ⁰
5
DC current gain h_FE = f (I_C)
V_CE = 10V
10 ^{3 SMBT 2222/A}
5
h _FE
10 ²
5
150 ˚C
25 ˚C
-50 ˚C
EHP00743
10 ^-1
0
0.2 0.4 0.6 0.8 1.0 V 1.2
V_{BE sat} ,V_{CE sat}
Delay time t_d = f (I_C)
Rise time t_r = f (I_C)
10 ¹
10 ^-1
10 ⁰
10 ¹
Storage time t_stg = f (I_C)
Fall time
t_f = f (I_C)
10 ² mA 10 ³
Ι_C
10 ^{3 SMBT 2222/A}
ns
5
t_d,t_r
t_r
10 ²
EHP00744
V_CC = 30 V
h_FE = 10
t_{r VBE = 5 V}
10 ^{3 SMBT 2222/A}
ns
5
t _s,t _f
10 ²
EHP00745
t_s
h_FE = 10
5
t_d
V_BE = 2 V
10 ¹
10 ⁰
t_d
V_BE = 0 V
5 10 ¹
5 10 ² mA 5 10 ³
Ι_C
5
t_f
h_FE = 20
h_FE = 10
10 ¹
10 ¹
5 10 ²
mA 5 10 ³
Ι_C
6
Feb-18-2002