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SMBT2222A Datasheet, PDF (3/6 Pages) Infineon Technologies AG – NPN Silicon Switching Transistor
◁
SMBT2222A/ MMBT2222A
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 20 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Noise figure
 IC = 100 µA, VCE = 10 V, RS = 1 k ,
f = 1 kHz,  f = 200 Hz
fT
300 -
-
Ccb
-
-
8
Ceb
-
-
25
F
-
-
4
Short-circuit input impedance
IC = 1 mA, VCE = 10 V, f = 1 kHz
IC = 10 mA, VCE = 10 V, f = 1 kHz
Open-circuit reverse voltage transf.ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
IC = 10 mA, VCE = 10 V, f = 1 kHz
Short-circuit forward current transf.ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
IC = 10 mA, VCE = 10 V, f = 1 kHz
Open-circuit output admittance
IC = 1 mA, VCE = 10 V, f = 1 kHz
IC = 10 mA, VCE = 10 V, f = 1 kHz
Delay time
VCC = 30 V, IC = 150 mA, IB1 = 15 mA,
VBE(off) = 0.5 V
Rise time
VCC = 30 V, IC = 150 mA, IB1 = 15 mA,
VBE(off) = 0.5 V
Storage time
VCC = 30 V, IC = 150 mA, IB1=IB2 = 15mA
Fall time
VCC = 30 V, IC = 150 mA, IB1=IB2 = 15mA
h11e
2
-
8
0.25 - 1.25
h12e
-
-
8
-
-
4
h21e
50
-
300
75
-
375
h22e
5
-
35
25
-
200
td
-
-
10
tr
-
-
25
tstg
-
-
225
tf
-
-
60
Unit
MHz
pF
dB
k
10-4
-
S
ns
ns
ns
3
Feb-18-2002
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