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SMBT2222A Datasheet, PDF (1/6 Pages) Infineon Technologies AG – NPN Silicon Switching Transistor
NPN Silicon Switching Transistor
 High DC current gain: 0.1mA to 500 mA
 Low collector-emitter saturation voltage
 Complementary type: SMBT2907A (PNP)
SMBT2222A/ MMBT2222A
3
2
1 VPS05161
Type
Marking
Pin Configuration
SMBT2222A/ MMBT2222A s1P
1=B
2=E
3=C
Package
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Total power dissipation, TS = 77 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point1)
Symbol
VCEO
VCBO
VEBO
IC
Ptot
Tj
Tstg
RthJS
Value
40
75
6
600
330
150
-65 ... 150
220
Unit
V
mA
mW
°C
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1
Feb-18-2002