PXFC211507SC Datasheet, PDF (6/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 – 2170 MHz

PXFC211507SC
Load Pull Performance
Z Source
D
Z Load
G
S
Pulsed CW signal: 10 µs, 10% duty cycle, V_DD = 28 V, I_DQ = 960 mA
Class AB
Max Output Power
P_1dB
Max PAE
Freq
Zs
[MHz]
[Ω]
Zl
Gain P_OUT P_OUT PAE
Zl
Gain P_OUT P_OUT PAE
[Ω]
[dB] [dBm] [W]
[%]
[Ω]
[dB] [dBm] [W]
[%]
2110 2.10 – j6.55 1.52 – j4.82 18.9 52.10 163
53.7 2.30 – j3.60 21.1 50.90 123
62.5
2140 2.31 – j6.77 1.58 – j4.87 19.2 52.10 163
54.0 2.22 – j3.56 21.4 50.80 120
62.4
2170 3.07 – j7.01 1.57 – j4.95 19.4 52.20 166
54.0 2.21 – j3.64 21.7 50.90 123
62.5
Reference Circuit Assembly, 2110 – 2170 MHz
DUT
PXFC211507SC V1
Reference Circuit No. LTN/PXFC211507SC V1
Order Code
LTNPTFC211507SCE3TOBO1
PCB
Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, _r = 3.66
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower
Data Sheet
6 of 9
Rev. 02, 2015-03-03