PXFC211507SC Datasheet, PDF (3/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 – 2170 MHz

PXFC211507SC
Typical Performance (data taken in a production test fixture)
Two-carrier WCDMA Drive-up
V_DD = 28 V, V_GS = 2.6 V,
I_DQ = 960 mA, ƒ = 2140 MHz,
3GPP WCDMA signal, 8 dB PAR,
21 ^{10 MHz carrier spacing, 3.84 MHz BW} 56
20
48
19 Gain
40
18
32
17
24
16
16
15
Efficiency
8
14
c211507sc-gr1b
0
29 33 37 41 45 49 53
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, V_GS = 2.6 V,
I_DQ = 960 mA, ƒ = 2165 MHz
3GPP WCDMA signal, 8 dB PAR,
21 ^{10 MHz carrier spacing, 3.84 MHz BW} 56
20
48
19 ^Gain
40
18
32
17
24
16
16
Efficiency
15
8
14
c211507sc-gr1c
0
29 33 37 41 45 49 53
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, V_GS = 2.6 V,
I_DQ = 960 mA, ƒ = 2115 MHz
3GPP WCDMA signal: 8 dB PAR,
-15 ^{10 MHz carrier spacing, 3.84 MHz BW} 50
IMD Low
-25
IMD Up
40
ACPR
Efficiency
-35
30
-45
20
-55
10
-65
29
c211507sc-gr2a
0
33 37 41 45 49 53
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, V_GS = 2.6 V,
I_DQ = 960 mA, ƒ = 2140 MHz
3GPP WCDMA signal: 8 dB PAR,
-15 ^{10 MHz carrier spacing, 3.84 MHz BW} 50
IMD Low
IMD Up
-25
ACPR
40
Efficiency
-35
30
-45
20
-55
10
-65
29
c211507sc-gr2b
0
33 37 41 45 49 53
Output Power (dBm)
Data Sheet
3 of 9
Rev. 02, 2015-03-03