PXFC211507SC Datasheet, PDF (4/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 – 2170 MHz

Typical Performance (cont.)
Two-carrier WCDMA Drive-up
V_DD = 28 V, V_GS = 2.6 V,
I_DQ = 960 mA, ƒ = 2165 MHz
3GPP WCDMA signal: 8 dB PAR,
-15 ^{10 MHz carrier spacing, 3.84 MHz BW} 50
IMD Low
-25
IMD Up
ACPR
40
Efficiency
-35
30
-45
20
-55
10
-65
29
c211507sc-gr2c
0
33 37 41 45 49 53
Output Power (dBm)
PXFC211507SC
Two-carrier WCDMA Drive-up
V_DD = 28 V, V_GS = 2.6 V, I_DQ = 960 mA,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-15
-25
-35
-45
-55
29
2115 IMDL
2140 IMDL
2165 IMDL
2115 IMDU
2140 IMDU
2165 IMDU
c211507sc-gr3
33 37 41 45 49 53
Output Power (dBm)
CW Performance
V_DD = 28 V, I_DQ = 960mA
21
70
20
60
19 Gain
50
18
40
17
30
16
20
Efficiency
15
2115 MHz
2140 MHz
10
2165 MHz
14
c211507sc-gr4
0
27 32 37 42 47 52 57
Output Power (dBm)
CW Performance at seleted V_DD
I_DQ = 960 mA, ƒ = 2115 MHz
21
60
V_DD = 24 V
20 ^VDD ^{= 28 V}
50
V_DD = 32 V
19
40
18
30
Gain
17
20
16
15
27
10
Efficiency
c211507sc-gr5a
0
32 37 42 47 52 57
Output Power (dBm)
Data Sheet
4 of 9
Rev. 02, 2015-03-03