PTAC210802FC_16 Datasheet, PDF (6/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz

Reference Circuit (cont.)
Components Information
Component
Description
Input
C101, C102, C103, C109 Chip capacitor, 24 pF
C104, C110
Capacitor, 100 μF
C105, C108
Chip capacitor, 0.1 μF
C106, C107
Capacitor, 10 μF
R101, R102, R104
Resistor, 10 Ω
R103
Resistor, 50 Ω
R105, R106
Resistor, 1000 Ω
S1
Hybrid coupler
Output
C201, C208, C210, C211
C202, C209
C203, C204, C205, C206,
C207
Capacitor, 10 μF
Capacitor, 220 μF
Chip capacitor, 24 pF
Pinout Diagram (top view)
Peak
Main ^S
D1
D2
G1
G2
H-37248-4__do_pd_10-10-2012
Lead connections for PTAC210802FC
PTAC210802FC
Suggested Supplier
ATC
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Anaren
Digi-Key
Anaren
Digi-Key
Digi-Key
ATC
P/N
ATC800A240JT250XB
PCE4442TR-ND
399-1267-2-ND
587-1818-2-ND
P10GCT-ND
C16A50Z4
P1.0KECT-ND
X3C21P1-03S
587-1818-2-ND
PCE4444TR-ND
ATC800A240JT250XB
Pin
Description
D1
Drain device 1 (Peak)
D2
Drain device 2 (Main)
G1
Gate device 1 (Peak)
G2
Gate device 2 (Main)
S
Source (flange)
Data Sheet
6 of 8
Rev. 05.2, 2016-06-17