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PTAC210802FC_16 Datasheet, PDF (2/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz
PTAC210802FC
DC Characteristics (each side)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Gate Leakage Current
On-State Resistance
(main)
On-State Resistance
(peak)
Operating Gate Voltage (main)
Operating Gate Voltage (peak)
Conditions
VGS = 0 V, IDS = 10 mA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, IDQ = 0 V
VGS = 10 V, VDS = 0.1 V
VGS = 10 V, VDS = 0.1 V
VDS = 28 V, IDQ = 85 mA
VDS = 28 V, IDQ = 360 mA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (main, TCASE = 70°C, 19 W CW)
Thermal Resistance (peak, TCASE = 70°C, 60 W CW)
Ordering Information
Type and Version
PTAC210802FC V1 R0
PTAC210802FC V1 R250
Order Code
PTAC210802FCV1R0XTMA1
PTAC210802FCV1R250XTMA1
Symbol
V(BR)DSS
IDSS
IDSS
IGSS
RDS(on)
RDS(on)
VGS
VGS
Min
65
—
—
—
—
—
2.30
2.35
Typ
—
—
—
—
0.6
0.19
2.65
2.70
Max
—
1
10
1
—
—
3.0
3.05
Unit
V
µA
µA
V
W
W
V
V
Symbol Value
VDSS
VGS
VDD
TJ
TSTG
RqJC
RqJC
65
–6 to +10
0 to +32
225
–65 to +150
2.5
0.8
Unit
V
V
V
°C
°C
°C/W
°C/W
Package Description
H-37248-4, earless flange
H-37248-4, earless flange
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 8
Rev. 05.2, 2016-06-17