PTAC210802FC_16 Datasheet, PDF (3/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz

PTAC210802FC
Typical Performance (data taken in a production Doherty test fixture)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 100 mA, V_GS1 = 1.3 V,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
-18
-20
-22
-24
-26
-28
2110 IMDL
2140 IMDL
2110 IMDU
2140 IMDU
2170 IMDL
2170 IMDU
-30
c210802fc-g1
32 34 36 38 40 42 44 46 48
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 100 mA, V_GS1 = 1.3 V,
ƒ = 2170 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
-10
BW 3.84 MHz
IMD Low
55
IMD Up
-15
ACPR
50
Efficiency
-20
45
-25
40
-30
35
-35
30
-40
c210802fc-g2
25
32 34 36 38 40 42 44 46 48
Output Power (dBm)
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 100 mA, V_GS1 = 1.3 V
3GPP WCDMA signal, PAR = 10 dB,
BW 3.84 MHz
12
26
OPAR
10
22
8
18
Gain
6
14
4
2
32
2110 MHz
2140 MHz
2170 MHz
34 36 38 40 42 44
Output Power (dBm)
10
c210802fc-g3
6
46 48
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 100 mA, V_GS1 = 1.3 V,
3GPP WCDMA signal, PAR = 10 dB,
BW 3.84 MHz
-10
2110 MHz
55
2140 MHz
-15
2170 MHz
Efficiency
50
-20
45
-25
40
-30
ACPU
35
-35
30
-40
c210802fc-g4
25
32 34 36 38 40 42 44 46 48
Output Power (dBm)
Data Sheet
3 of 8
Rev. 05.2, 2016-06-17