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HYS64V16302GU Datasheet, PDF (6/13 Pages) Infineon Technologies AG – 3.3 V 16M × 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules
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HYS 64V16302GU
SDRAM-Modules
Operating Currents per SDRAM component
TA = 0 to 70 °C, VDD = 3.3 V ± 0.3 V
Parameter
Test Condition Symbol -7.5 -8
Unit Note
max.
Operating current
–
tRC = tRC(MIN.), tCK = tCK(MIN.)
Outputs open, Burst Length = 4, CL=3
All banks operated in random access,
all banks operated in ping-pong
manner to maximize gapless data
access
ICC1
230 170 mA 1)
Precharge standby current
in Power Down Mode
CS = VIH (MIN.), CKE ≤ VIL(MAX.)
Precharge stand-by current
in Non Power Down Mode
CS = VIH (MIN.), CKE ≥ VIH(MIN.)
No operating current
tCK = min., CS = VIH (MIN.),
active state (max. 4 banks)
tCK = min
ICC2P
2
2
mA 1)
tCK = min
ICC2N
40
30
mA 1)
CKE ≥ VIH(MIN.) ICC3N
50
45
mA 1)
CKE ≤ VIL(MAX.) ICC3P
10
10
mA 1)
Burst Operating Current
–
ICC4
170 120 mA 1, 2)
tCK = min
Read command cycling
Auto Refresh Current
–
tCK = min
Auto Refresh command cycling
ICC5
150 100 mA 1)
Self Refresh Current
Self Refresh Mode
CKE = 0.2 V
ICC6
3
3
mA 1)
1. All values are shown per one SDRAM component.
2. These parameters depend on the cycle rate. These values are measured at 133 MHz operation
frequency for-7 & -7.5 and at 100 MHz for -8 modules.
Input signals are changed once during tCK, excepts for ICC6 and for stand-by currents when
tCK = infinity.
3. These parameters are measured with continuous data stream during read access and all DQ
toggling. CL = 3 and BL = 4 are assumed and th data-out current is excluded.
INFINEON Technologies
6
9.01
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