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HYS64V16302GU Datasheet, PDF (5/13 Pages) Infineon Technologies AG – 3.3 V 16M × 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules
HYS 64V16302GU
SDRAM-Modules
Absolute Maximum Ratings
Parameter
Symbol
Limit Values
min.
max.
Input / Output voltage relative to VSS
VIN, VOUT – 1.0
4.6
Power supply voltage on VDD
VDD,
– 1.0
4.6
Storage temperature range
TSTG
-55
+150
Power dissipation
PD
–
4
Data out current (short circuit)
IOS
–
50
Permanent device damage may occur if “Absolute Maximum Ratings” are exceeded.
Functional operation should be restricted to recommended operation conditions.
Exposure to higher than recommended voltage for extended periods of time affect device reliability
Unit
V
V
oC
W
mA
DC Characteristics
TA = 0 to 70 °C; VSS = 0 V; VDD= 3.3 V ± 0.3 V
Parameter
Input High Voltage
Input Low Voltage
Output High Voltage (IOUT = – 4.0 mA)
Output Low Voltage (IOUT = 4.0 mA)
Input Leakage Current, any input
(0 V < VIN < 3.6 V, all other inputs = 0 V)
Output Leakage Current
(DQ is disabled, 0 V < VOUT < VDD)
Symbol
VIH
VIL
VOH
VOL
II(L)
Limit Values
min.
max.
2.0
– 0.5
VDD + 0.3
0.8
2.4
–
–
0.4
– 10
10
Unit
V
V
V
V
µA
IO(L)
– 10
10
µA
Capacitance
TA = 0 to 70 °C; VDD = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Input Capacitance (A0 - A12, RAS, CAS, WE)
Input Capacitance (CS0 ,CS2)
Input Capacitance (CLK0 - CLK3)
Input Capacitance (CKE0)
Input Capacitance (DQMB0 - DQMB7)
Input /Output Capacitance (DQ0 - DQ63, CB0 - CB7)
Input Capacitance (SCL, SA0-2)
Input /Output Capacitance
INFINEON Technologies
5
Symbol
CI1
CI2
CICL
CI3
CI4
CIO
CSC
CSD
Limit Values
max.
35
25
35
30
13
10
8
10
Unit
pF
pF
pF
pF
pF
pF
pF
pF
9.01