HYS64V16302GU Datasheet, PDF (2/13 Pages) Infineon Technologies AG – 3.3 V 16M × 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules

HYS 64V16302GU
SDRAM-Modules
Ordering Information
Type
Code
Package
Description
HYS 64V16302GU-7-D
PC133-222-520 L-DIM-168-32 133 MHz CL=2 16M × 64
one bank SDRAM module
HYS 64V16302GU-7.5-C2 PC133-333-520 L-DIM-168-32 133 MHz CL=3 16M × 64
HYS 64V16302GU-7.5-D
one bank SDRAM module
HYS 64V16302GU-8-C2 PC100-222-620 L-DIM-168-32 100 MHz CL=2 16M × 64
one bank SDRAM module
Module
Height
1.15”
1.15”
Note: All part numbers end with a place code (not shown), designating the die revision. Consult
factory for current revision. Example: HYS64V16302GU-8-C2, indicating Rev.C2 dies are
used for SDRAM components.
Pin Definitions and Functions
A0 - A12
Address Inputs
BA0, BA1 Bank Select
DQ0 - DQ63 Data Input/Output
CB0 - CB7 Check Bits (x72
organization only)
RAS
Row Address Strobe
CAS
Column Address Strobe
WE
Read/Write Input
CKE0
Clock Enable
CLK0 - CLK3
Clock Input
DQMB0 - DQMB7 Data Mask
CS0, CS2
Chip Select
V_DD
Power (+ 3.3 V)
V_SS
SCL
SDA
N.C./DU
Ground
Clock for Presence Detect
Serial Data Out for Pres. Detect
No Connection
Address Format
Part Number
Rows Columns Bank Select Refresh
16M×64 HYS64V16302GU 13 9
2
8k
Period
64 ms
Interval
7,8 µs
INFINEON Technologies
2
9.01