BTN7960 Datasheet, PDF (6/28 Pages) Infineon Technologies AG – High Current PN Half Bridge NovalithIC

High Current PN Half Bridge
BTN7960
General Product Characteristics
4
General Product Characteristics
4.1
Absolute Maximum Ratings
Absolute Maximum Ratings ¹⁾
T_j = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter
Symbol
Limit Values
Unit Conditions
Min.
Max.
Voltages
4.1.1 Supply Voltage
V_S
-0.3
4.1.2 Logic Input Voltage
V_IN
-0.3
V_INH
4.1.3 Voltage at SR Pin
V_SR
-0.3
4.1.4 Voltage between VS and IS Pin
V_S -V_IS -0.3
4.1.5 Voltage at IS Pin
V_IS
-20
Currents
4.1.6 HS/LS Continuous Drain Current²⁾ I_D(HS) -44
I_D(LS)
-40
4.1.7 HS/LS Pulsed Drain Current²⁾
I_D(HS)
-90
I_D(LS)
45
V
–
5.3
V
–
1.0
V
–
45
V
–
45
V
–
44
A
T_C < 85°C
switch active
40
A
T_C < 125°C
switch active
90
A
T_C < 85°C
t_pulse = 10ms
single pulse
4.1.8 HS/LS PWM Current²⁾
-85
I_D(HS)
-55
I_D(LS)
-50
85
A
T_C < 125°C
t_pulse = 10ms
single pulse
55
A
T_C < 85°C
f = 1kHz, DC = 50%
50
A
T_C < 125°C
f = 1kHz, DC = 50%
-60
60
A
T_C < 85°C
f = 20kHz, DC = 50%
-54
54
A
T_C < 125°C
f = 20kHz, DC = 50%
Temperatures
4.1.9 Junction Temperature
4.1.10 Storage Temperature
ESD Susceptibility
4.1.11 ESD Susceptibility HBM
T_j
-40
T_stg
-55
V_ESD
150
°C –
150
°C –
kV
HBM³⁾
IN, INH, SR, IS
-2
2
OUT, GND, VS
-6
6
1) Not subject to production test, specified by design
2) Maximum reachable current may be smaller depending on current limitation level
3) ESD susceptibility, HBM according to EIA/JESD22-A114-B (1.5 kΩ, 100 pF)
Data Sheet
6
Rev. 1.1, 2007-11-21