BTN7960 Datasheet, PDF (11/28 Pages) Infineon Technologies AG – High Current PN Half Bridge NovalithIC

High Current PN Half Bridge
BTN7960
Block Description and Characteristics
5.2.1 Power Stages - Static Characteristics
V_S = 8 V to 18 V, T_j = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter
Symbol
Limit Values
Unit Conditions
Min. Typ. Max.
High Side Switch - Static Characteristics
5.2.1 ON State High Side Resistance¹⁾ R_ON(HS)
mΩ I_OUT = 9 A; V_S = 13.5 V
–
7
–
–
10
12.8
BTN7960B
T_j = 25 °C
T_j = 150 °C
BTN7960P
–
7.8 –
–
11.2 14
T_j = 25 °C
T_j = 150 °C
BTN7960S
–
7.1 –
–
10.2 13
T_j = 25 °C
T_j = 150 °C
5.2.2 Leakage Current High Side
I_L(LKHS) –
–
1
µA
V_INH = 0 V; V_OUT = 0 V
T_j < 85 °C
–
–
50
µA
V_INH = 0 V; V_OUT = 0 V
T_j = 150 °C
5.2.3
Reverse Diode Forward-Voltage V_DS(HS)
High Side²⁾
–
–
–
V
0.9 1.5
0.8 1.1
0.6 0.8
I_OUT = -9 A
T_j = -40 °C
T_j = 25 °C
T_j = 150 °C
Low Side Switch - Static Characteristics
5.2.4 ON State Low Side Resistance¹⁾ R_ON(LS)
mΩ I_OUT = -9 A; V_S = 13.5 V
–
9
–
–
14
17.7
BTN7960B
T_j = 25 °C
T_j = 150 °C
BTN7960P
–
9.8 –
–
15.2 18.9
T_j = 25 °C
T_j = 150 °C
BTN7960S
–
9.1 –
–
14.2 17.9
T_j = 25 °C
T_j = 150 °C
5.2.5 Leakage Current Low Side
I_L(LKLS) –
–
1
µA
V_INH = 0 V; V_OUT = V_S
T_j < 85 °C
–
–
10
µA
V_INH = 0 V; V_OUT = V_S
T_j = 150 °C
5.2.6
Reverse Diode Forward-Voltage V_SD(LS)
Low Side²⁾
–
V
0.9 1.5
I_OUT = 9 A
T_j = -40 °C
–
0.8 1.1
T_j = 25 °C
–
0.7 0.9
T_j = 150 °C
1) Specified R_ON value is related to normal soldering points; R_ON values is specified for BTN7960B: pin 1,7 to pin 8 (tab,
backside) and for BTN7960P/BTN7960S: pin 1,7 to pin4
2) Due to active freewheeling, diode is conducting only for a few µs, depending on R_SR
Data Sheet
11
Rev. 1.1, 2007-11-21