BTN7960 Datasheet, PDF (3/28 Pages) Infineon Technologies AG – High Current PN Half Bridge NovalithIC

High Current PN Half Bridge
NovalithIC™
BTN7960B
BTN7960P
BTN7960S
1
Overview
Features
• Path resistance of max. 30.5 mΩ @ 150 °C (typ. 16 mΩ @ 25 °C)
High Side: max. 12.8 mΩ @ 150 °C (typ. 7 mΩ @ 25 °C)
Low Side: max. 17.7 mΩ @ 150 °C (typ. 9 mΩ @ 25 °C)
(for BTN7960B (SMD))
• Low quiescent current of typ. 7 μA @ 25 °C
• PWM capability of up to 25 kHz combined with active freewheeling
• Switched mode current limitation for reduced power dissipation
in overcurrent
• Current limitation level of 33 A min. / 47 A typ. (low side)
• Status flag diagnosis with current sense capability
• Overtemperature shut down with latch behaviour
• Overvoltage lock out
• Undervoltage shut down
• Driver circuit with logic level inputs
• Adjustable slew rates for optimized EMI
• Green Product (RoHS compliant)
• AEC Qualified
Description
The BTN7960 is a integrated high current half bridge for motor
drive applications. It is part of the NovalithIC™ family containing one
p-channel highside MOSFET and one n-channel lowside MOSFET with
an integrated driver IC in one package. Due to the p-channel highside
switch the need for a charge pump is eliminated thus minimizing EMI.
Interfacing to a microcontroller is made easy by the integrated driver IC
which features logic level inputs, diagnosis with current sense, slew rate
adjustment, dead time generation and protection against over-
temperature, overvoltage, undervoltage, overcurrent and short circuit.
The BTN7960 provides a cost optimized solution for protected high
current PWM motor drives with very low board space consumption.
PG-TO263-7-1
PG-TO220-7-11
PG-TO220-7-12
Type
BTN7960B
BTN7960P
BTN7960S
Data Sheet
Package
PG-TO263-7-1
PG-TO220-7-11
PG-TO220-7-12
3
Marking
BTN7960B
BTN7960P
BTN7960S
Rev. 1.1, 2007-11-21