BSC057N08NS3G Datasheet, PDF (6/9 Pages) Infineon Technologies AG – OptiMOS3 Power-Transistor

9 Drain-source on-state resistance
R _DS(on)=f(T _j); I _D=50 A; V _GS=10 V
10
BSC057N08NS3 G
10 Typ. gate threshold voltage
V _GS(th)=f(T _j); V _GS=V _DS
4
8
max
6
typ
4
2
3
730 µA
73 µA
2
1
0
-60 -20
20
60 100 140 180
T _j [°C]
0
-60 -20
20
60 100 140 180
T _j [°C]
11 Typ. capacitances
C =f(V _DS); V _GS=0 V; f =1 MHz
10⁴
12 Forward characteristics of reverse diode
I _F=f(V _SD)
parameter: T _j
1000
Ciss
10³
25 °C
Coss
100
150 °C
150°C, max
10²
25°C, max
Crss
10
10¹
10⁰
0
Rev. 2.4
20
40
60
V _DS [V]
1
80
0.0
page 6
0.5
1.0
1.5
V _SD [V]
2.0
2009-10-22