BSC057N08NS3G Datasheet, PDF (5/9 Pages) Infineon Technologies AG – OptiMOS3 Power-Transistor

5 Typ. output characteristics
I _D=f(V _DS); T _j=25 °C
parameter: V _GS
400
360
9V
10 V
8V
320
7V
280
240
BSC057N08NS3 G
6 Typ. drain-source on resistance
R _DS(on)=f(I _D); T _j=25 °C
parameter: V _GS
15
5 V 5.5 V
6V
7V
10
200
160
6V
120
5.5 V
80
40
5V
4.5 V
0
0
1
2
3
4
V _DS [V]
7 Typ. transfer characteristics
I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max
parameter: T _j
150
140
130
120
110
100
90
80
70
60
50
40
30
150 °C
25 °C
20
10
0
01234567
V _GS [V]
8V
9V
5
10 V
00
5
0 50 100 150 200 250 300 350 400
I _D [A]
8 Typ. forward transconductance
g _fs=f(I _D); T _j=25 °C
160
140
120
100
80
60
40
20
0
8
0
40
80
120
160
I _D [A]
Rev. 2.4
page 5
2009-10-22