BSC057N08NS3G Datasheet, PDF (2/9 Pages) Infineon Technologies AG – OptiMOS3 Power-Transistor

Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P _tot
T _C=25 °C
T _A=25 °C,
R _thJA=50 K/W²⁾
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
BSC057N08NS3 G
Value
Unit
114
W
2.5
-55 ... 150
°C
55/150/56
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R _thJC bottom
-
top
Device on PCB
R _thJA minimal footprint
-
6 cm² cooling area²⁾
-
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V _(BR)DSS V _GS=0 V, I _D=1 mA
80
V _GS(th) V _DS=V _GS, I _D=73 µA
2
I _DSS
V _DS=80 V, V _GS=0 V,
T _j=25 °C
-
V _DS=80 V, V _GS=0 V,
T _j=125 °C
-
I _GSS
V _GS=20 V, V _DS=0 V
-
R _DS(on) V _GS=10 V, I _D=50 A
-
V _GS=6 V, I _D=25 A
-
R_G
-
g _fs
|V _DS|>2|I _D|R _DS(on)max,
I _D=50 A
40
-
1.1 K/W
18
-
62
-
50
-
-V
2.8
3.5
0.1
1 µA
10
100
10
100 nA
4.7
5.7 mΩ
6.4
11
1.9
-Ω
80
-S
Rev. 2.4
page 2
2009-10-22