BFS481 Datasheet, PDF (6/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA)

BFS481
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
22
dB ^IC^=5mA
0.9GHz
18
0.9GHz
16
14
1.8GHz
12
1.8GHz
10
8
6
4
2
0
0
2
4
6
8
V
12
V_CE
Power Gain G_ma, G_ms = f(f)
Intermodulation Intercept Point IP₃=f(I_C)

(3rd order, Output, Z_S=Z_L=50 )
V_CE = Parameter, f = 900MHz
22
8V
dBm
18
5V
16
3V
14
2V
12
10
8
1V
6
4
2
0
-2
-4
0 2 4 6 8 10 12 14 16 mA 20
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
30
I_C=5mA
dB
20
15
10
10V
1V
0.7V
5
0
0 0.5 1 1.5 2 2.5 GHz 3.5
f
V_CE = Parameter
22
dB ^IC=5mA
18
16
14
12
10
8
10V
6
2V
1V
4
0.7V
2
0
0 0.5 1 1.5 2 2.5 GHz 3.5
f
6
Jun-27-2001