BFS481 Datasheet, PDF (5/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA)

BFS481
Collector-base capacitance C_cb = f (V_CB)
f = 1MHz
0.4
pF
0.3
0.25
0.2
0.15
0.1
0.05
Transition frequency f_T = f (I_C)
V_CE = Parameter
9
GHz
7
6
5
4
3
2
1
10V
8V
5V
3V
2V
1V
0.7V
0
0
4
8
12
16 V 22
V_CB
0
0
4
8
12
16 mA
24
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
22
dB
10V
18
5V
16
3V
14
2V
12
10
1V
8
0.7V
6
4
0
5
10
15
mA
25
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
16
dB
10V
12
5V
10
3V
8
2V
6
4
1V
2
0.7V
0
0
5
10
15
mA
25
I_C
5
Jun-27-2001