BFS481 Datasheet, PDF (1/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA)

BFS481
NPN Silicon RF Transistor

For low-noise, high-gain broadband amplifier
at collector currents from 0.5 mA to 12 mA

f_T = 8 GHz
F = 1.4 dB at 900 MHz

Two (galvanic) internal isolated
Transistors in one package
C1
E2
B2
6
5
4
4
5
6
3
2
1
VPS05604
TR2
TR1
1
2
3
B1
E1
C2
EHA07196
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFS481
Marking
RFs
Pin Configuration
Package
1=B 2=E 3=C 4=B 5=E 6=C _SOT363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T_S
83 °C ¹⁾
Junction temperature
Ambient temperature
Storage temperature
Symbol
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
Value
Unit
12
V
20
20
2
20
mA
2
175
mW
150
°C
-65 ... 150
-65 ... 150
Thermal Resistance
Junction - soldering point²⁾
R_thJS
1_{TS is measured on the collector lead at the soldering point to the pcb}
2For _{calculation of RthJA please refer to Application Note Thermal Resistance}

380
K/W
1
Jun-27-2001