BFR280W Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems

BFR280W
Collector-base capacitance C_cb = f (V_CB)
f = 1MHz
0.5
pF
0.3
0.2
0.1
0.0
0
2
4
6
8 V 11
V_CB
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
20
10V
dB
2V
16
Transition frequency f_T = f (I_C)
V_CE = Parameter
11
GHz
9
10V
8
8V
5V
7
3V
6
2V
5
4
1V
3
0.7V
2
1
0
0
2
4
6
8 mA 11
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
14
dB
10V
3V
2V
10
14
8
1V
1V
12
6
0.7V
0.7V
10
4
8
2
6
0
2
4
6
8 mA 11
I_C
6
0
0
2
4
6
8 mA 11
I_C
Jun-27-2001