BFR280W Datasheet, PDF (4/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems

BFR280W
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
6.472
fA
VAF = 25.609 V
BF =
IKF =
89.888 -
0.073457 A
NE = 1.6163 -
BR = 20.238 -
VAR = 5.6909 V
NC = 1.0651 -
RBM = 14.999

IKR =
RB =
RE =
0.012696 A
15


2.4518

CJE = 36.218 fF
TF =
11.744 ps
VJE = 0.70035 V
XTF = 0.21585 -
ITF = 6.2179 mA PTF = 0
deg
VJC = 1.1943 V
MJC = 0.30017 -
TR = 2.3693 ns
CJS = 0
fF
MJS = 0
-
XTB = 0
-
XTI = 3
-
FC = 0.96275 -
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
NF = 1.0801 -
ISE = 15.596 fA
NR = 0.83403 -
ISC = 1.409
fA
IRB =
RC =
0.031958 mA
6.989


MJE = 0.69773 -
VTF = 0.2035 V
CJC = 252.99 fF
XCJC = 0.19188 -
VJS = 0.75
V
EG = 1.11
eV
TNOM 300
K
Package Equivalent Circuit:
L_BI =
0.57
nH
L_BO = 0.4
nH
L_EI =
0.43
nH
L_EO = 0.5
nH
L_CI =
0
nH
L_CO = 0.41
nH
C_BE = 61
fF
C_CB = 101
fF
C_CE = 175
fF
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales
office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm
4
Jun-27-2001