BFR280W Datasheet, PDF (1/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems

BFR280W
NPN Silicon RF Transistor
3

For low noise, low-power amplifiers in mobile
communication systems (pager, cordless
telephone) at collector currents from 0.2 mA to 8 m

f_T = 7.5 GHz
F = 1.5 dB at 900 MHz
2
1
VSO05561
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
BFR280W
REs
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T_S = 115 °C ¹⁾
Junction temperature
Ambient temperature
Storage temperature
Pin Configuration
1=B
2=E
3=C
Package
SOT323
Symbol
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
Value
Unit
8
V
10
10
2
10
mA
1.2
80
mW
150
°C
-65 ... 150
-65 ... 150
Thermal Resistance
Junction - soldering point²⁾
R_thJS

435
K/W
1_{TS is measured on the collector lead at the soldering point to the pcb}
2For _{calculation of RthJA please refer to Application Note Thermal Resistance}
1
Jun-27-2001