BFP650 Datasheet, PDF (6/7 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

Third order Intercept Point IP₃=ƒ(I_C)
(Output, Z_S=Z_L=50Ω)
V_CE = parameter, f = 1.8 GHz
33
dBm
4V
27
3V
24
21
18
1V
2V
15
12
9
6
3
0
0
15 30 45 60 75 90 105 120 ^mA 150
I_C
Power gain G_ma, G_ms = ƒ(I_C)
V_CE = 3V
f = parameter
30
dB
26
0.9GHz
24
22
20
1.8GHz
18
2.4GHz
16
3GHz
14
4GHz
12
5GHz
10
6GHz
8
6
0
20 40 60 80 100 120 140 160 ^mA 200
I_C
BFP650
Transition frequency f_T= ƒ(I_C)
f = 1GHz
V_CE = parameter
40
GHz
30
3V
25
20
15
2V
10
1V
5
0.5V
0
0
20 40 60 80 100 120 140 ^mA 180
I_C
Power Gain G_ma, G_ms = ƒ(f),
|S₂₁|² = f (f)
V_CE = 3V, I_C = 80mA
55
dB
45
40
35
30
Gms
25
20
S21²
15
10
5
0
0
1
2
Gma
3
4 ^GHz
6
f
6
Jan-08-2004