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| BFP650 Datasheet, PDF (5/7 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor | |||
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Total power dissipation Ptot = Æ(TS)
BFP650
Permissible Pulse Load RthJS = Æ(tp)
550
mW
450
400
350
300
250
200
150
100
50
0
0
15 30 45 60 75 90 105 120 °C
150
TS
Permissible Pulse Load
Ptotmax/PtotDC = Æ(tp)
10 3
K/W
10 2
D = 0.5
0.2
0.1
10 1
0.05
0.02
0.01
0.005
0
10
0
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
°C 10 0
tp
Collector-base capacitance Ccb= Æ(VCB)
f = 1MHz
10 2
-
D=0
0.005
0.01
0.02
10 1
0.05
0.1
0.2
0.5
10
0
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
0.8
pF
0.6
0.5
0.4
0.3
0.2
0.1
0
0
2
4
6
8 10 V
14
VCB
5
Jan-08-2004
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