BFP650 Datasheet, PDF (3/7 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

BFP650
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
f_T
I_C = 80 mA, V_CE = 3 V, f = 1 GHz
Collector-base capacitance
C_cb
V_CB = 3 V, f = 1 MHz
Collector emitter capacitance
C_ce
V_CE = 3 V, f = 1 MHz
Emitter-base capacitance
C_eb
V_EB = 0.5 V, f = 1 MHz
Noise figure
F
-
37
- GHz
- 0.26 - pF
- 0.45 -
-
1.1
-
dB
I_C = 10 mA, V_CE = 3 V, f = 1.8 GHz, Z_S = Z_Sopt
I_C = 10 mA, V_CE = 3 V, f = 6 GHz, Z_S = Z_Sopt
-
0.8
-
-
1.9
-
Power gain, maximum available¹⁾
I_C = 80 mA, V_CE = 3 V, Z_S = Z_Sopt,
Z_L = Z_Lopt, f = 1.8 GHz
I_C = 80 mA, V_CE = 3 V, Z_S = Z_Sopt,
Z_L = Z_Lopt, f = 6 GHz
G_ma
-
21
-
- 10.5 -
Transducer gain
I_C = 80 mA, V_CE = 3 V, Z_S = Z_L = 50 Ω,
f = 1.8 GHz
|S_21e|²
dB
-
17
-
I_C = 80 mA, V_CE = 3 V, Z_S = Z_L = 50 Ω,
f = 6 GHz
-
6
-
Third order intercept point at output²⁾
V_CE = 3 V, I_C = 80 mA, f = 1.8 GHz,
Z_S = Z_L = 50 Ω
1dB Compression point at output
I_C = 80 mA, V_CE = 3 V, Z_S = Z_L = 50 Ω,
f = 1.8 GHz
IP₃
- 29.5 - dBm
P_-1dB
-
18
-
1_{Gma = |S21e / S12e| (k-(k²-1)}1/2₎
2IP3 _{value depends on termination of all intermodulation frequency components.}
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
3
Jan-08-2004