BFP640F Datasheet, PDF (6/6 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

Power Gain G_ma, G_ms = ƒ(f),
|S₂₁|² = f (f)
V_CE = 3V, I_C = 30mA
55
dB
45
40
35
30
Gms
25
20
|S21|²
15
Gma
10
5
0
1
2
3
4 GHz
6
f
BFP640F
Power gain G_ma, G_ms = ƒ (V_CE)
I_C = 30mA
f = parameter
30
dB
0.9
24
1.8
22
20
2.4
18
3
16
4
14
5
12
6
10
8
6
4
2
0
0 0.5 1 1.5 2 2.5 3 3.5 V 4.5
VCE
6
Mar-11-2004