BFP640F Datasheet, PDF (3/6 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

BFP640F
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
f_T
I_C = 30 mA, V_CE = 3 V, f = 1 GHz
Collector-base capacitance
C_cb
V_CB = 3 V, f = 1 MHz
Collector emitter capacitance
C_ce
V_CE = 3 V, f = 1 MHz
Emitter-base capacitance
C_eb
V_EB = 0.5 V, f = 1 MHz
Noise figure
F
30 40
- GHz
- 0.09 0.2 pF
- 0.18 -
-
0.5
-
dB
I_C = 5 mA, V_CE = 3 V, f = 1.8 GHz, Z_S = Z_Sopt
I_C = 5 mA, V_CE = 3 V, f = 6 GHz, Z_S = Z_Sopt
- 0.65 -
-
1.2
-
Power gain, maximum stable¹⁾
I_C = 30 mA, V_CE = 3 V, Z_S = Z_Sopt,
Z_L = Z_Lopt , f = 1.8 GHz
Power gain, maximum available¹⁾
I_C = 30 mA, V_CE = 3 V, Z_S = Z_Sopt,
Z_L = Z_Lopt, f = 6 GHz
G_ms
-
23
- dB
G_ma
-
12
- dB
Transducer gain
I_C = 30 mA, V_CE = 3 V, Z_S = Z_L = 50 Ω,
f = 1.8 GHz
|S_21e|²
dB
- 20.5 -
I_C = 30 mA, V_CE = 3 V, Z_S = Z_L = 50 Ω,
f = 6 GHz
-
10
-
Third order intercept point at output²⁾
V_CE = 3 V, I_C = 30 mA, f = 1.8 GHz,
Z_S = Z_L = 50 Ω
1dB Compression point at output
I_C = 30 mA, V_CE = 3 V, Z_S = Z_L = 50 Ω,
f = 1.8 GHz
IP₃
- 27.5 - dBm
P_-1dB
- 13.5 -
1_{Gma = |S21e / S12e| (k-(k²-1)}1/2_{), Gms = |S21e / S12e|}
2IP3 _{value depends on termination of all intermodulation frequency components.}
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
3
Mar-11-2004