BFP640F Datasheet, PDF (5/6 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

Collector-base capacitance C_cb= ƒ(V_CB)
f = 1MHz
0.25
pF
0.15
0.1
0.05
0
0
2
4
6
8 10 V
14
V_CB
Transition frequency f_T= ƒ(I_C)
f = 1GHz
V_CE = parameter
45
GHz
3V
35
30
2V
25
20
15
10
1V
5
0.5V
0
0
10
20
30
40 mA
60
I_C
BFP640F
Third order Intercept Point IP₃=ƒ(I_C)
(Output, Z_S=Z_L=50Ω)
V_CE = parameter, f = 1.8 GHz
30
dBm
4V
24
21
3V
18
15
12
2V
9
1V
6
3
0
0
10
20
30
40 mA
60
I_C
Power gain G_ma, G_ms = ƒ(I_C)
V_CE = 3V
f = parameter
30
dB
0.9
26
24
1.8
22
20
2.4
3
18
16
4
14
5
12
6
10
8
0
10
20
30
40 mA
60
I_C
5
Mar-11-2004