BFP420_13 Datasheet, PDF (6/9 Pages) Infineon Technologies AG – Low Noise Silicon Bipolar RF Transistor

Noise figure F = ƒ(I_C)
V_CE = 2 V, Z_S = Z_Sopt
Noise figure F = ƒ(I_C)
V_CE = 2 V, f = 1.8 GHz
BFP420
4
dB
3
2.5
2
1.5
f = 6 GHz
f = 5 GHz
1
f = 4 GHz
f = 3 GHz
f = 2.4 GHz
0.5
f = 1.8 GHz
f = 0.9 GHz
0
0 4 8 12 16 20 24 28 32 mA 38
I_C
Noise figure F = ƒ(f)
V_CE = 2 V, Z_S = Z_Sopt
3
dB
2
1.5
1
IC = 20 mA
IC = 5 mA
0.5
0
0
1
2
3
4 GHz
6
f
3
dB
2
1.5
ZS = 50 Ohm
ZS = ZSopt
1
0.5
0
0 4 8 12 16 20 24 28 mA 36
I_C
Source impedance for min.
noise figure vs. frequency
V_CE = 2 V, I_C = 5 mA / 20 mA
+j50
+j25
+j100
+j10
2.4GHz
1.8GHz
3GHz
0.9GHz
0
10
25
50
100 _0.45GHz
4GHz
5GHz
-j10
6GHz
-j25
-j100
-j50
6
2013-09-19