BFP420_13 Datasheet, PDF (5/9 Pages) Infineon Technologies AG – Low Noise Silicon Bipolar RF Transistor

Transition frequency f_T= ƒ(I_C)
f = 2 GHz
V_CE = parameter in V
30
GHz
2 to 4
1.5
24
1
22
0.75
20
18
16
14
12
0.5
10
8
6
4
2
0
0 5 10 15 20 25 30 mA 40
I_C
Power gain G_ma, G_ms = ƒ (I_C)
V_CE = 2V
f = parameter in GHz
30
dB
0.9
24
22
1.8
20
18
2.4
16
3
14
4
12
5
10
6
8
6
4
2
0
0 4 8 12 16 20 24 28 32 mA 40
I_C
BFP420
Power gain G_ma, G_ms, |S₂₁|² = ƒ (f)
V_CE = 2 V, I_C = 20 mA
44
40
36
32
G
ms
28
24
20
16
|S |²
21
12
G
ma
8
4
0
0
1
2
3
4
5
6
f [GHz]
Power gain G_ma, G_ms = ƒ (V_CE)
I_C = 20 mA
f = parameter in GHz
30
dB
0.9
24
22
1.8
20
2.4
18
16
3
14
4
12
5
10
6
8
6
4
2
0
0 0.5 1 1.5 2 2.5 3 3.5 V 4.5
V_CE
5
2013-09-19