BFP420_13 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – Low Noise Silicon Bipolar RF Transistor

Low Noise Silicon Bipolar RF Transistor
• For high gain and low noise amplifiers
• Minimum noise figure NF_min = 1.1 dB at 1.8 GHz
Outstanding G_ms = 21 dB at 1.8 GHz
3
4
• For oscillators up to 10 GHz
• Transition frequency f_T = 25 GHz
• Pb-free (RoHS compliant) and halogen-free package
with visible leads
• Qualification report according to AEC-Q101 available
BFP420
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP420
Marking
Pin Configuration
AMs _{1=B 2=E 3=C 4=E -}
-
Package
SOT343
Maximum Ratings at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
V_CEO
T_A = 25 °C
T_A = -55 °C
Collector-emitter voltage
V_CES
Collector-base voltage
V_CBO
Emitter-base voltage
V_EBO
Collector current
I_C
Base current
I_B
Total power dissipation¹⁾
P_tot
T_S ≤ 98 °C
Junction temperature
T_J
Storage temperature
T_Stg
1_{TS is measured on the emitter lead at the soldering point to the pcb}
Thermal Resistance
Parameter
Junction - soldering point¹⁾
Symbol
R_thJS
1
Value
Unit
V
4.5
4.1
15
15
1.5
60
mA
9
210
mW
150
°C
-55 ... 150
Value
250
Unit
K/W
2013-09-19