BFP405 Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low current applications For oscillators up to 12 GHz)

SIEGET
25 BFP405
Power gain G_ma, G_ms, |S₂₁|² = f (f)
V_CE = 2 V, I_C = 5 mA
Power gain G_ma, G_ms = f (I_C)
V_CE = 2V
f = parameter in GHz
40
32
dB
0.9
dB
32
1.8
24
28
2.4
24
20
3
20
16
4
5
16
12
6
12
8
8
G|S_m2
4
4
0
0.0
1.0
2.0
3.0
4.0 ^GHz
6.0
f
0
0
2
4
6
8 10 ^mA 14
I_C
Power gain G_ma,G_ms = f (V_CE)
I_C=5mA
f = parameter in GHz
30
GHz
0.9
24
1.8
22
2.4
3
20
18
4
16
5
14
6
12
10
8
6
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
4.5
V_CE
Collector-base capacitance C_cb = f (V_CB)
f = 1MHz
0.30
pF
0.20
0.15
0.10
0.05
0.00
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
4.0
V_CB
6
Aug-20-2001